闫 博,黄漫国,郭林琪,梁晓波,张丛春.双离子束溅射Al2O3高温绝缘薄膜的氧分压研究[J].测控技术,2022,41(12):8-12
双离子束溅射Al2O3高温绝缘薄膜的氧分压研究
Study on Dual Ion Beam Sputtering Oxygen Partial Pressure of Al2O3 High Temperature Resistant Insulating Thin Film
  
DOI:10.19708/j.ckjs.2022.01.210
中文关键词:  双离子束溅射沉积法  Al2O3薄膜  高温绝缘  溅射氧分压  氧铝元素比
英文关键词:dual ion beam sputtering deposition  Al2O3 thin film  high temperature resistant insulation  sputtering oxygen partial pressure  ratio of oxygen to aluminum(O∶Al ratio)
基金项目:国家重点研发计划(2020YFB200102);国家基础研究项目(2019-JCJQ-ZD-309)
作者单位
闫 博 上海交通大学 电子信息与电气工程学院 微纳电子学系 
黄漫国 航空工业北京长城航空测控技术研究所 先进传感器技术中心 状态监测特种传感技术航空科技重点实验室 
郭林琪 上海交通大学 电子信息与电气工程学院 微纳电子学系 
梁晓波 航空工业北京长城航空测控技术研究所 先进传感器技术中心 状态监测特种传感技术航空科技重点实验室 
张丛春 上海交通大学 电子信息与电气工程学院 微纳电子学系 
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中文摘要:
      采用双离子束溅射沉积法(DIBSD)制备了用作高温绝缘层的Al2O3薄膜,分析了所制备Al2O3薄膜的表面和截面形貌,研究了溅射氧分压对薄膜氧铝元素比的影响,并进一步探讨了氧铝元素比对Al2O3薄膜高温绝缘性能的影响。研究结果表明:双离子束溅射沉积法制备的Al2O3薄膜表面平整度高,粗糙度约为2.86 nm,截面形貌致密,没有微裂纹、空隙等缺陷;溅射氧分压的提高可以增加所制备Al2O3薄膜的氧铝元素比例,18%溅射氧分压下制备的Al2O3薄膜O∶Al约为1.44,接近Al2O3化合物的元素比;18%氧分压溅射的Al2O3薄膜,在1000 ℃具有6.5 MΩ的绝缘电阻值,高温绝缘性能良好。
英文摘要:
      Al2O3 thin film is prepared by dual ion beam sputtering deposition (DIBSD) as high temperature resistant insulation.The surface topography and cross section morphology of the prepared Al2O3 thin film is discussed.Also,the effect of sputtering oxygen partial pressure on ratio of oxygen to aluminum(O∶Al ratio) is studied.Moreover,the effect of O∶Al ratio on the high temperature insulating properties of Al2O3 thin films is further discussed.The results show that the Al2O3 film prepared by double ion beam sputtering deposition has high surface flatness with 2.86 nm roughness,dense cross-section morphology and no defects such as microcracks and pin-holes.The increase of sputtering oxygen partial pressure can increase the O∶Al ratio of Al2O3 films.The O∶Al ratio of Al2O3 films prepared under 18% sputtering oxygen partial pressure is about 1.44,which is close to the element ratio of Al2O3 compounds.The Al2O3 film sputtered by 18% oxygen partial voltage has an insulation resistance of 6.5 MΩ at 1000 ℃ and good insulation performance at high temperature.
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